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Número de pieza | FCD600N60Z | |
Descripción | N-Channel SuperFET II MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FCD600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ
November 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 510 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
• RoHS Compliant
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
FCD600N60Z Rev. C3
1
FCD600N60Z
600
±20
±30
7.4
4.7
22.2
135
1.5
0.89
100
20
89
0.71
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD600N60Z
1.4
100
Unit
oC/W
www.fairchildsemi.com
1 page Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
2
1
0.5
PDM
0.2
0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
10-3
t1
t2
*Notes:
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FCD600N60Z Rev. C3
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FCD600N60Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
FCD600N60Z | N-Channel SuperFET II MOSFET | Fairchild Semiconductor |
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