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PDF IPD90N08S4-05 Data sheet ( Hoja de datos )
| Número de pieza | IPD90N08S4-05 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N08S4-05
Product Summary
V DS
R DS(on),max
ID
80 V
5.3 mW
90 A
PG-TO252-3-313
Type
IPD90N08S4-05
Package
PG-TO252-3-313
Marking
4N0805
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=45A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
90
90
360
240
75
±20
144
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20
1 page  
IPD90N08S4-05
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
10 V
7V
300
240
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
12
5V
10
180 6 V
120
5.5 V
60 5 V
0
01234
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
360
5
8
5.5 V
6V
6
7V
4
60
10 V
30 60
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
90
9
300
-55 °C 25 °C 175 °C
8
240 7
180 6
120 5
60 4
0
2.5 3.5 4.5 5.5 6.5 7.5
V GS [V]
3
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2014-06-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD90N08S4-05.PDF ] | |
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