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PDF IPD50N08S4-13 Data sheet ( Hoja de datos )
| Número de pieza | IPD50N08S4-13 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD50N08S4-13 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD50N08S4-13
Product Summary
VDS
RDS(on),max
ID
80 V
13.2 mW
50 A
PG-TO252-3-313
Type
IPD50N08S4-13
Package
Marking
PG-TO252-3-313 4N0813
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
50
50
200
76
31
±20
72
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30
1 page  
IPD50N08S4-13
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
180 10 V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
30
5 V 5.5 V
160
25
140 7V
120
100 20
80
60
40
20
0
0
6V
5.5 V
5V
24
VDS [V]
6
15
10
0
20
ID [A]
6V
7V
10 V
40
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
200 22
180
-55 °C
160
25 °C
18
140
120
175 °C
100 14
80
60
10
40
20
0
2.5
4.5
VGS [V]
6.5
6
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2014-06-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD50N08S4-13.PDF ] | |
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