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PDF IPB160N08S4-03 Data sheet ( Hoja de datos )
| Número de pieza | IPB160N08S4-03 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB160N08S4-03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB160N08S4-03
Product Summary
V DS
R DS(on),max
ID
80 V
3.2 mW
160 A
PG-TO263-7-3
Type
IPB160N08S4-03
Package
PG-TO263-7-3
Marking
4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=80A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
160
120
640
350
120
±20
208
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20
1 page  
IPB160N08S4-03
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
640
10 V
560
480
400
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
8
7V
5V
7
6
320
240
160
80
0
01234
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
640
560
480
400
320
240
160
6V 5
5.5 V
5.5 V
5V
4
3
6V
7V
10 V
56
2
0
40 80 120 160
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
-55 °C
25 °C
175 °C
5
4.5
4
3.5
3
2.5
80 2
0
1.5
34567
-60 -20 20
60 100 140 180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2014-06-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB160N08S4-03.PDF ] | |
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