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PDF IPD180N10N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD180N10N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max TO-263
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD180N10N3 G
100 V
18 mW
43 A
Package
Marking
PG-TO252-3
180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=33 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
43
30
172
50
±20
71
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2014-05-19
1 page  
IPD180N10N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
140
10 V
120
7.5 V
100
6V
80
60
5.5 V
40
5V
20
4.5 V
00
0
1
23
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
4
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
35
30 4.5 V
25
5V
20 6 V
7.5 V
15 10 V
10
5
0
50
20 40
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
60
60
40
20
0
0
Rev. 2.3
175 °C
25 °C
246
VGS [V]
40
20
0
80
page 5
20 40 60
ID [A]
80
2014-05-19
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD180N10N3G.PDF ] | |
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