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PDF IKB20N60H3 Data sheet ( Hoja de datos )
| Número de pieza | IKB20N60H3 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKB20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
1 page  
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=2.00mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=10.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.29mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
min.
Value
typ.
max. Unit
600 -
-V
-
-
1.95 2.40
2.30 -
V
- 2.50 -
-
-
1.65 2.05
1.67 -
V
- 1.65 -
4.1 5.1 5.7 V
- - 40.0 µA
- - 1500.0
- - 100 nA
- 10.9 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=20.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
min.
Value
typ.
max. Unit
- 1100 -
- 70 - pF
- 32 -
- 120.0 - nC
- -A
120
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 16 - ns
- 20 - ns
- 194 - ns
- 11 - ns
- 0.45 - mJ
- 0.24 - mJ
- 0.69 - mJ
5 Rev.2.3,2014-03-12
5 Page 
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
16
120V
480V
14
12
10
1000
Cies
Coes
Cres
8
100
6
4
2
0
0 20 40 60 80 100
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=20A)
120
140
10
0 10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
300 15
250 12
200 9
150 6
100 3
50
10
12 14 16 18
VGE,GATE-EMITTERVOLTAGE[V]
20
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
0
10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11 Rev.2.3,2014-03-12
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKB20N60H3.PDF ] | |
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