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PDF IHW20N120R5 Data sheet ( Hoja de datos )

Número de pieza IHW20N120R5
Descripción Reverse Conducting IGBT
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IHW20N120R5 Hoja de datos, Descripción, Manual

ResonantSwitchingSeries
ReverseConductingIGBTwithmonolithicbodydiode
IHW20N120R5
Datasheet
IndustrialPowerControl

1 page




IHW20N120R5 pdf
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
IHW20N120R5
min.
Value
typ.
max. Unit
1200 -
-V
-
-
1.55 1.75
1.75 -
V
- 1.80 -
-
-
1.60 1.85
1.75 -
V
- 1.85 -
5.1 5.8 6.4 V
- - 100.0 µA
- 300.0 -
- - 100 nA
- 15.2 - S
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=1080V,IC=20.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1340 -
- 43 - pF
- 34 -
- 170.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=10.0,RG(off)=10.0,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
min. typ. max. Unit
- 260 - ns
- 50 - ns
- 0.75 - mJ
5 Rev.2.1,2015-01-26

5 Page





IHW20N120R5 arduino
1E+4
Cies
Coes
Cres
1000
100
ResonantSwitchingSeries
1
IHW20N120R5
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
i: 1
2345
6
ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3
τi[s]: 3.0E-5
2.1E-4
2.1E-3
0.0110047 0.07241154 1.854229
0.001
1E-6
1E-5
1E-4 0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
1
0.1
0.01
40
Tj=25°C
Tj=175°C
35
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
30
25
20
15
10
i: 1
2345
6
ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3
τi[s]: 3.0E-5
2.1E-4
2.1E-3
0.0110047 0.07241154 1.854229
0.001
1E-6
1E-5
1E-4
0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF,FORWARDVOLTAGE[V]
Figure 20. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
11 Rev.2.1,2015-01-26

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