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Número de pieza | IDP40E65D2 | |
Descripción | Diode ( Rectifier ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDP40E65D2 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Diode
RapidSwitchingEmitterControlledDiode
IDP40E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
1 page EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
IDP40E65D2
min.
Value
typ.
max. Unit
- 36 - ns
- 0.40 - µC
- 22.0 - A
- -10000 - A/µs
- 75 - ns
- 0.13 - µC
- 2.9 - A
- -54 - A/µs
min.
Value
typ.
max. Unit
- 60 - ns
- 1.14 - µC
- 32.0 - A
- -8700 - A/µs
- 83 - ns
- 0.32 - µC
- 5.6 - A
- -51 - A/µs
5 Rev.2.2,2014-03-31
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IDP40E65D2.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDP40E65D2 | Diode ( Rectifier ) | Infineon |
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