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PDF BFR740L3RH Data sheet ( Hoja de datos )

Número de pieza BFR740L3RH
Descripción Low Noise Silicon Germanium Bipolar RF Transistor
Fabricantes Infineon　
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BFR740L3RH
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 2.1, 2016-03-16
RF & Protection Devices

1 page




BFR740L3RH pdf
BFR740L3RH
List of Figures
List of Figures
Figure 6-1 Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7-1 BFR740L3RH Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . 17
Figure 7-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . 18
Figure 7-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 7-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 7-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 20
Figure 7-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . 21
Figure 7-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 21
Figure 7-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 7-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . 24
Figure 7-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Figure 9-1 Package Outline of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-2 Footprint of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-3 Marking Layout of TSLP-3-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-4 Tape of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
5 Revision 2.1, 2016-03-16

5 Page





BFR740L3RH arduino
7 Electrical Characteristics
BFR740L3RH
Electrical Characteristics
7.1 DC Characteristics
Table 7-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4
Collector emitter leakage current
ICES
–
Collector base leakage current
Emitter base leakage current
DC current gain
ICBO
IEBO
hFE
–
–
160
Values
Typ. Max.
4.7 –
1 400
1 40
1 40
1 40
250 400
Unit Note / Test Condition
V IC = 1 mA, IB = 0
Open base
nA VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0
E-B short circuited
nA VCB = 5V, IE = 0
Open emitter
nA VEB = 0.5V, IC = 0
Open collector
VCE = 3 V, IC = 25 mA
Pulse measured
7.2 General AC Characteristics
Table 7-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Transition frequency
Min.
fT –
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
Values
Typ. Max.
42 –
0.09 0.12
0.3 –
0.4 –
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 25 mA
f = 2 GHz
VCB = 3 V, VBE = 0
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
VEB = 0.5 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 2.1, 2016-03-16

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