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PDF SUD23N06-31 Datasheet ( Hoja de datos )

Número de pieza SUD23N06-31
Descripción N-Channel 60V (D-S) MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo

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SUD23N06-31 Hoja de datos, Descripción, Manual
N-Channel 60 V (D-S), MOSFET
SUD23N06-31
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
0.031 at VGS = 10 V
0.045 at VGS = 4.5 V
ID (A)a
9.1
7.6
Qg (Typ.)
6.5 nC
TO-252
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
D
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
60
± 20
21.4
17.1
9.1a
7.6a
50
20.8
3.8a
20
20
31.25
20
5.7a
3.6a
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board, t 10 s.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
18
3.2
Maximum
22
4.0
Unit
°C/W
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
www.vishay.com
1

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SUD23N06-31 pdf
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
SUD23N06-31
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
40 3.0
2.5
30
2.0
20 1.5
1.0
10
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
www.vishay.com
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