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PDF SI4436DY Data sheet ( Hoja de datos )
| Número de pieza | SI4436DY | |
| Descripción | N-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 60-V (D-S) MOSFET
Si4436DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.036 at VGS = 10 V
0.043 at VGS = 4.5 V
ID (A)d
8
8
Qg (Typ.)
10.5 nC
SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free)
Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
60
± 20
8a
6.8
6.1b, c
4.8b, c
25
4.2
2.1b, c
15
11.2
5
3.2
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12 5
9
Package Limited
6
3
4
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4436DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4436DY.PDF ] | |
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