|
|
PDF SI2308BDS Data sheet ( Hoja de datos )
| Número de pieza | SI2308BDS | |
| Descripción | N-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI2308BDS (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
New Product
N-Channel 60-V (D-S) MOSFET
Si2308BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.156 at VGS = 10 V
60
0.192 at VGS = 4.5 V
ID (A)a
2.3
2.1
Qg (Typ.)
2.3 nC
TO-236
(SSOT23)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Battery Switch
• DC/DC Converter
G1
S2
3D
Top View
Si2308BDS (L8)*
*Marking Code
Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free)
Si2308BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
Limit
60
± 20
2.3
1.8
1.9b, c
1.5b, c
8
1.39
0.91b, c
6
1.8
1.66
1.06
1.09b, c
0.7b, c
- 55 to 150
Unit
V
A
mJ
W
°C
Maximum
115
75
Unit
°C/W
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
Si2308BDS
Vishay Siliconix
2.4
1.8
1.2
0.6
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.0 1.2
1.6
0.9
1.2
0.6
0.8
0.3
0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI2308BDS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI2308BDS | N-Channel 60-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |