|
|
PDF IRLI540G Data sheet ( Hoja de datos )
| Número de pieza | IRLI540G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRLI540G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Power MOSFET
IRLI540G, SiHLI540G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5 V
64
9.4
27
Single
0.077
TO-220 FULLPAK
D
GDS
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
• RDS (on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRLI540GPbF
SiHLI540G-E3
IRLI540G
SiHLI540G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 2.1 mH, Rg = 25 Ω, IAS = 17 A (see fig. 12).
c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
LIMIT
100
± 10
17
12
68
0.32
400
48
5.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90399
S10-1029-Rev. B, 03-May-10
www.vishay.com
1
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRLI540G, SiHLI540G
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90399
S10-1029-Rev. B, 03-May-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLI540G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRLI540A | Power MOSFET ( Transistor ) |  Fairchild Semiconductor |
| IRLI540G | HEXFET Power MOSFET |  International Rectifier |
| IRLI540G | Power MOSFET ( Transistor ) | Vishay |
| IRLI540N | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |