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PDF IRLD120 Data sheet ( Hoja de datos )

Número de pieza IRLD120
Descripción Power MOSFET ( Transistor )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! IRLD120 Hoja de datos, Descripción, Manual

Power MOSFET
IRLD120, SiHLD120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
12
3.0
7.1
Single
0.27
HVMDIP
D
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HVMDIP
IRLD120PbF
SiHLD120-E3
IRLD120
SiHLD120
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 5.0 V
TA = 25 °C
TA = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 153 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
LIMIT
100
± 10
1.3
0.94
10
0.0083
690
1.3
0.13
1.3
5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1

1 page




IRLD120 pdf
TA, Ambient Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
IRLD120, SiHLD120
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
www.vishay.com
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