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PDF IRF9910TRPBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF9910TRPBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRF9910TRPbF-1
VDS
RDS(on) m ax Q1
(@VGS = 10V)
RDS(on) m ax Q2
(@VGS = 10V)
Qg (typical) Q1
Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
20 V
13.4
mΩ
9.3
7.4
15
nC
10
A
12
S2 1
G2 2
S1 3
G1 4
HEXFET® Power MOSFET
8 D2
7 D2
6 D1
5 D1
SO-8
Applications
l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles
and set-top box
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF9910PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF9910TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max.
Q2 Max.
20
± 20
10 12
8.3 9.9
83 98
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 11
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
1 page  
Q1 - Control FET
1.5
ID = 10A
VGS = 10V
1.0
IRF9910TRPbF-1
Typical Characteristics
Q2 - Synchronous FET
1.5
ID = 12A
VGS = 10V
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
35 ID = 10A
30
25
20 TJ = 125°C
15
10
TJ = 25°C
5
0
2 3 4 5 6 7 8 9 10
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
25
ID = 12A
20
15
TJ = 125°C
10
5 TJ = 25°C
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs. Gate Voltage
5 www.irf.com © 2014 International Rectifier
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs. Gate Voltage
Submit Datasheet Feedback
October 16, 2014
5 Page 
IRF9910TRPbF-1
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
I ndus tr ial
(per JEDE C JE S D47F †† guidelines)
SO-8
MS L1
(per JEDE C J-S T D-020D†† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, Q1: L = 0.95mH, RG = 25Ω, IAS = 8.3A; Q2: L = 0.54mH, RG = 25Ω, IAS = 9.8A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF9910PbF-1" to "IRF9910TRPbF-1" -all pages
• Removed the "IRF9910PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF9910TRPBF-1.PDF ] | |
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