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PDF IRFD020 Data sheet ( Hoja de datos )
| Número de pieza | IRFD020 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRFD020, SiHFD020
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
50
VGS = 10 V
24
7.1
7.1
Single
0.10
HVMDIP
D
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
HVMDIP
IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagea
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currentb
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)c
L = 100 μH
ILM
IL
Maximum Power Dissipation
TC = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. TJ = 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
d. 1.6 mm from case.
LIMIT
50
± 20
2.4
1.5
19
0.0080
19
2.2
1.0
- 55 to + 150
300d
UNIT
V
A
W/°C
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRFD020, SiHFD020
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig. 11 - Typical Transconductance vs. Drain Current
Fig. 12 - Breakdown Voltage vs. Temperature
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFD020.PDF ] | |
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