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PDF TF412S Data sheet ( Hoja de datos )

Número de pieza TF412S
Descripción N-Channel JFET
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No Preview Available ! TF412S Hoja de datos, Descripción, Manual

Ordering number : ENA2300A
TF412S
N-Channel JFET
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
http://onsemi.com
Features
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
Applications
Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Value
30
30
10
10
100
150
Storage Temperature Tstg 55 to +150
This product is designed to “ESD immunity < 200V*”,
so please take care when handling.
* Machine Model
Unit
V
V
mA
mA
mW
C
C
Marking
31
2
SOT-883
A2 M
M = Date Code
Ordering & Package Information
Device
TF412ST5G
Pb-free and
Halogen Free
Package
SOT-883
Shipping
8,000
pcs. / reel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta 25C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
VDS = 10V, VGS = 0V
VDS = 10V, VGS=0V, f = 1kHz
VDS = 10V, VGS = 0V, f = 1MHz
min
30
Value
typ
0.18
1.2
3.0
0.80
5.0
4
1.1
max
1.0
1.5
3.0
Unit
V
nA
V
mA
mS
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Semiconductor Components Industries, LLC, 2014
April, 2014
42114HK TC-00003110/22512HK GB No.A2300-1/4

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