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PDF EMH2418R Data sheet ( Hoja de datos )
| Número de pieza | EMH2418R | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA2267A
EMH2418R
N-Channel Power MOSFET
24V, 9A, 15mΩ, Dual EMH8
http://onsemi.com
Features
Low On-resistance
2.5V drive
Common-Drain Type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
PW10s, duty cycle1%
Power Dissipation
When mounted on ceramic substrate(900mm20.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate(900mm20.8mm)
JunctionTemperature
Storage Temperature
PD
PT
Tj
Tstg
Value
24
12
9
40
Unit
V
V
A
A
1.3 W
1.4 W
150
- 55 to
+150
C
C
Electrical Connection
N-channel
87 6 5
1234
Marking
LT
LOT No.
Packing Type:TL
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate(900mm20.8mm)
Symbol
RJA
Value
Unit
96 C/W
TL
Ordering & Package Information
Device
Package Shipping
EMH2418R-TL-H
Pb-free and
Halogen Free
EMH8
3,000
pcs. / reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003090/D1813HK PE No. A2267-1/6
1 page  
Package Dimensions
EMH2418R-TL-H
SOT-383FL/EMH8
CASE419AT
ISSUE O
Unit : mm
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain
6: Drain
7: Drain
8: Drain
EMH2418R
Soldering Footprint
0.3
0.5
No.A2267-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMH2418R.PDF ] | |
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