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PDF EFC6611R Data sheet ( Hoja de datos )
| Número de pieza | EFC6611R | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA2291A
EFC6611R
N-Channel Power MOSFET
12V, 27A, 3.2mΩ, Dual EFCP
Features
2.5V drive
Protection diode in
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Common-drain type
2KV ESD HBM
http://onsemi.com
Specifications
Absolute Maximum Ratings at Ta = 25C
EFCP3517-6DGH-020
Parameter
Symbol
Conditions
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW100s, duty cycle1%
When mounted on ceramic substrate (5000mm20.8mm)
12
8
27
100
2.5
150
- 55 to +150
V
V
A
A
W
C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm20.8mm)
Symbol
RJA
Value
50
Unit
C /W
Electrical Characteristics at Ta 25C
Parameter
Symbol
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
Conditions
IS=1mA, VGS=0V
VSS=10V, VGS=0V
VGS=±8V, VSS=0V
VSS=6V, IS=1mA
VSS=6V, IS=3A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
12
0.5
Value
Unit
typ max
V
1 A
1 A
1.3 V
19 S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40214HK TC-00003102/21214TKIM No.A2291-1/6
1 page  
EFC6611R
No.A2291-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EFC6611R.PDF ] | |
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