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PDF EFC4626R Data sheet ( Hoja de datos )

Número de pieza EFC4626R
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! EFC4626R Hoja de datos, Descripción, Manual

Ordering number : ENA2292A
EFC4626R
N-Channel Power MOSFET
24V, 5A, 46.2m, Dual EFCP
http://onsemi.com
Features
2.5V drive
Protection diode in
Common-drain type
2KV ESD HBM
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW10s, duty cycle1%
When mounted on ceramic substrate (5000mm20.8mm)
Value
24
10
5
60
1.4
150
- 55 to +150
Unit
V
V
A
A
W
C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm20.8mm)
Symbol
RJA
Value
84
Unit
C /W
Electrical Characteristics at Ta 25C
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=2A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
24
0.5
Value
Unit
typ max
V
1 A
1 A
1.3 V
7S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003108/21214TKIM No.A2292-1/6

1 page




EFC4626R pdf
EFC4626R
No.A2292-5/6

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