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PDF EMH2412 Data sheet ( Hoja de datos )

Número de pieza EMH2412
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! EMH2412 Hoja de datos, Descripción, Manual

Ordering number : ENA1315A
EMH2412
N-Channel Power MOSFET
24V, 6A, 27mΩ, Dual EMH8
http://onsemi.com
Features
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
24
±12
6
60
1.3
1.4
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 EMH2412-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
LM
1
0.5
2.0
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
8765
LOT No.
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7

1 page




EMH2412 pdf
Embossed Taping Specication
EMH2412-TL-H
EMH2412
No. A1315-5/7

5 Page










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