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PDF FT25C08A Data sheet ( Hoja de datos )

Número de pieza FT25C08A
Descripción SPI Serial EEPROM
Fabricantes FMD 
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Fremont Micro Devices
FT25C08A DS
SPI Serial EEPROM
8K (8-bit wide)
FEATURES
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 (0,0) and 3 (1,1)
Data Sheet Describes Mode 0 Operation
Low voltage and low power operations
FT25C08A VCC = 1.8V to 5.5V
20MHz clock rate (5V)
Maximum Standby current < 1µA (typically 0.02µA and 0.06µA @ 1.8V and 5.5V respectively)
Partial page write operation allowed (32 bytes page write mode)
Self-timed programming cycle (5 ms max)
Block Write Protection (Protect 1/4, 1/2, or Entire Array)
Write protect pin for hardware data protection
High reliability: typically 1,000,000 cycles endurance
100 years data retention
Industrial temperature range (-40to 85)
Standard 8-pin DIP/SOP/TSSOP Pb-free packages
DESCRIPTION
The FT25C08A is 8192 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly
known as EEPROM. They are organized as 1024 words of 8 bits (1 byte) each. The devices are fabricated
with proprietary advanced CMOS process for low power and low voltage applications. These devices are
available in standard 8-lead DIP, 8-lead SOP and 8-lead TSSOP packages. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible serial bus. The HOLD pin may be used to suspend
any serial communication without resetting the serial sequence. While the device is paused, transitions on
its inputs will be ignored. Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of
applications.
© 2014 Fremont Micro Devices Inc.
Confidential Rev0.80
DS25C08A - Page1

1 page




FT25C08A pdf
Fremont Micro Devices
FT25C08A DS
DEVICE OPERATION
The FT25C08A utilizes an 8-bit instruction register. The list of instructions and their operation codes are
contained in Table A. All instructions, addresses, and data are transferred with the MSB first and start with a
high-to-low CS transition.
Table A Instruction Set for the FT25C08A
Instruction Name
WREN
WRDI
RDSR
WRSR
READ
WRITE
Instruction Format
0000 X110
0000 X100
0000 X101
0000 X001
0000 X011
0000 X010
Operation
Set Write Enable Latch
Reset Write Enable Latch
Read Status Register
Write Status Register
Read Data from Memory Array
Write Data to Memory Array
(A) STATUS REGISTER OPERATION
Table B Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit2 Bit 1 Bit 0
WPEN X X X BP1 BP0 WEN RDY
WRITE ENABLE (WREN): The device will power up in the write disable state when VCC is applied. All
programming instructions must therefore be preceded by a Write Enable instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable instruction
disables all programming modes. The WRDI instruction is independent of the status of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to the status
register. The READY/BUSY and Write Enable status of the device can be determined by the RDSR
instruction. Similarly, the block write protection bits indicate the extent of protection employed. These bits
are set by using the WRSR instruction.
Table C Status Register Bit Definition
Bit Definition
Bit 0 ( RDY )
Bit 0 = “0” ( RDY ) indicates the device is READY. Bit 0 = “1”
indicates the write cycle is in progress.
Bit 1 (WEN)
Bit 2 (BP0)
Bit 1= “0” indicates the device is not WRITE ENABLED. Bit 1 = “1”
indicates the device is write enabled.
See table D.
Bit 3 (BP1)
See table D.
Bits 4-6 are “0”s when device is not in an internal write cycle.
Bit 7 (WPEN) See table E.
Bits 0-7 are “1” during an internal write cycle.
© 2014 Fremont Micro Devices Inc.
Confidential Rev0.80
DS25C08A - Page5

5 Page





FT25C08A arduino
Fremont Micro Devices
DC CHARACTERISTICS
FT25C08A DS
Applicable over recommended operating range from:TAI =-40to +85VCC = +1.8V to +5.5V(unless
otherwise noted)
Symbol
VCC1
VCC2
VCC3
ICC1
ICC2
ICC3
ISB1
ISB2
ISB3
IIL
IOL
VIL (1)
VIH(1)
VOL1
VOH1
VOL2
VOH2
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
Supply Current
Supply Current
Standby current
Standby current
Standby current
Input leakage
Output leakage
Input low level
Input high level
Output low level
Output High level
Output low level
Output High level
Test Conditions
Min
VCC=5.0V @ 20MHz, SO=Open,
Read
VCC=5.0V @ 20MHz, SO=Open,
Read, Write
VCC=5.0V @ 5MHz, SO=Open,
Read, Write
1.8
2.7
4.5
VCC = 1.8V, CS = VCC
VCC = 2.7V, CS = VCC
VCC = 5.0V, CS = VCC
VIN = VCC or VSS
VIN = VCC or VSS
-0.6
3.6VVCC5.5V, IOL = 3.0mA
3.6VVCC5.5V, IOH =-1.6mA
1.8VVCC3.6V, IOL = 0.15mA
1.8VVCC3.6V, IOH =-100uA
VCC0.7
VCC 
VCC 
Typical
7.5
Max
5.5
5.5
5.5
10.0
4.0 10.0
4.0
0.07
6.0
1.0
1.0
1.0
3.0
3.0
VCC0.3
VCC 0.5
0.4
0.2
Unit
V
V
V
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
Notes:1. VIL min and VIH max are reference only and are not tested.
© 2014 Fremont Micro Devices Inc.
Confidential Rev0.80
DS25C08A - Page11

11 Page







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