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PDF 15N50K-MT Datasheet ( Hoja de datos )

Número de pieza 15N50K-MT
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo
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15N50K-MT datasheet

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15N50K-MT pdf
15N50K-MT
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
00 120 240 360 480 600
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
12
10
8 VGS=10V, ID=7.5A
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Drain to Source Voltage, VDS (V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.6 1.2 1.8 2.4 3.0 3.8
Gate Threshold Voltage, VTH (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
18
15
12
9
6
3
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Número de piezaDescripciónFabricantes
15N50K-MTN-CHANNEL POWER MOSFETUnisonic Technologies
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