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PDF 11N50K-MT Datasheet ( Hoja de datos )

Número de pieza 11N50K-MT
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo

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11N50K-MT Hoja de datos, Descripción, Manual
UNISONIC TECHNOLOGIES CO., LTD
11N50K-MT
Preliminary
11A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N50K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N50K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 0.55@ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50KL-TF2-T
11N50KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
Pin Assignment
123
GD S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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11N50K-MT pdf
11N50K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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