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PDF 10N60K-MT Datasheet ( Hoja de datos )

Número de pieza 10N60K-MT
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo

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10N60K-MT Hoja de datos, Descripción, Manual
UNISONIC TECHNOLOGIES CO., LTD
10N60K-MT
Preliminary
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N60K-MT is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 0.75@ VGS =10V, ID = 5 A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
1
TO-220
1
TO-220F1
1
TO-220F3
1
TO-220F
1
TO-220F2
1
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N60KL-TA3-T
10N60KG-TA3-T
TO-220
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
10N60KL-TQ2-T
10N60KG-TQ2-T
TO-263
10N60KL-TQ2-R
10N60KG-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
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Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-022.h

1 page

10N60K-MT pdf
10N60K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-022.h

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