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Número de pieza | IRLML6302PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRLML6302PBF-1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-20
0.60
2.4
-0.78
V
Ω
nC
A
IRLML6302PbF-1
HEXFET® Power MOSFET
G1
S2
3D
Micro3TM
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML6302TRPbF-1
Package Type
Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6302TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Typ.
Max.
230
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014
1 page IRLML6302PbF-1
-4.5V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRLML6302PBF-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLML6302PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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