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PDF IRLML5203PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLML5203PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
VDSS
-30V
G1
S2
IRLML5203PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
3D
Micro3TM
Base Part Number
IRLML5203TRPbF
Package Type
Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel 3000
Orderable Part Number
IRLML5203TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 28, 2014
1 page  
IRLML5203PbF
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
t2
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLML5203PBF.PDF ] | |
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