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PDF IRLML2246TRPbF Data sheet ( Hoja de datos )

Número de pieza IRLML2246TRPbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 97630A
IRLML2246TRPbF
VDS
VGS Max
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
-20
±12
135
236
Application(s)
System/Load Switch
V
V
m
m
HEXFET® Power MOSFET
*
'
6  Micro3TM (SOT-23)
IRLML2246TRPbF
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
-20
-2.6
-2.1
-11
1.3
0.80
0.01
± 12
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
03/09/12

1 page




IRLML2246TRPbF pdf
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
150
IRLML2246TRPbF
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
-VGS
Pulse Width µs
Duty Factor 
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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