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PDF IRLB3813PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLB3813PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97407
IRLB3813PbF
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Power Tools
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
30V 1.95mΩ@VGS = 10V 57nC
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
G
Gate
DS
G
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
fJunction-to-Ambient
Notes through are on page 9
www.irf.com
Max.
30
± 20
h260
h190
1050
230
120
1.6
-55 to + 175
300 (1.6mm from case)
x x10lb in (1.1N m)
Units
V
A
W
W/°C
°C
Typ.
–––
0.50
–––
Max.
0.64
–––
62
Units
°C/W
1
07/03/09
1 page  
IRLB3813PbF
300 3.0
250
Limited By Package
2.5
200 2.0
150 1.5 ID = 150µA
ID = 1.0mA
100 1.0 ID = 1.0A
50 0.5
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.4985
0.0022
τ4τ4 0.0001
0.1392
τi (sec)
0.004600
8.246580
6.149340
0.000300
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLB3813PBF.PDF ] | |
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