DataSheet.es    


PDF ZXMS6005DT8Q Data sheet ( Hoja de datos )

Número de pieza ZXMS6005DT8Q
Descripción N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
Logotipo Diodes Logotipo



Hay una vista previa y un enlace de descarga de ZXMS6005DT8Q (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! ZXMS6005DT8Q Hoja de datos, Descripción, Manual

ZXMS6005DT8Q
Green
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Continuos Drain Source Voltage
On-State Resistance
Nominal Load Current (VIN = 5V)
Clamping Energy
60V
200m
1.8A
210mJ
Description
The ZXMS6005DT8Q is a dual self protected low side MOSFET with
logic level input. It integrates over-temperature, over-current, over-
voltage (active clamp) and ESD protected logic level functionality. The
ZXMS6005DT8Q is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Features and Benefits
Compact Dual Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
AEC-Q101-006 Short Circuit Reliability Characterized
PPAP Capable (Note 4)
Mechanical Data
Case: SM-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.117 grams (approximate)
SM-8
IN1
Top View
D1 D2
IN2
S1
Device Symbol
S2
1
IN1
S1
IN2
S2
Top View
Pin-Out
D1
D1
D2
D2
Ordering Information (Note 5)
Product
ZXMS6005DT8QTA
Marking
ZXMS6005D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005D
Pin 1
ZXMS6005D = Product Type Marking Code
Top View
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
1 of 9
www.diodes.com
July 2014
© Diodes Incorporated

1 page




ZXMS6005DT8Q pdf
ZXMS6005DT8Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V ID = 10mA
Off State Drain Current
IDSS
1
2
µA VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
Input Threshold Voltage
VIN(th)
0.7
1
1.5
V VDS = VGS, ID = 1mA
Input Current
IIN
60 100
120 200
µA VIN = +3V
VIN = +5V
Input Current while Over Temperature Active
— 300 µA VIN = +5V
Static Drain-Source On-State Resistance
RDS(on)
170 250 mΩ VIN = +3V, ID = 1A
150 200
VIN = +5V, ID = 1A
Continuous Drain Current (Notes 5 & 9)
Continuous Drain Current (Notes 5 & 8)
1.4 —
VIN = 3V; TA = +25°C
1.6 —
ID 1.7 —
A VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
1.8 —
VIN = 5V; TA = +25°C
Current Limit (Note 11)
Dynamic Characteristics
ID(LIM)
2.2
3.3
5
7
A VIN = +3V
VIN = +5V
Turn On Delay Time
td(on)
6
— µs
Rise Time
Turn Off Delay Time
tr — 14 — µs
td(off)
34
µs VDD = 12V, ID = 1A, VGS = 5V
Fall Time
Over-Temperature Protection
ff — 19 — µs
Thermal Overload Trip Temperature (Note 12)
TJT
150
175
°C
Thermal Hysteresis (Note 12)
ff — 10 — °C
Notes:
11. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated
outside saturation makes current limit unnecessary.
12. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6005DT8Q
Document number: DS37136 Rev. 3 - 2
5 of 9
www.diodes.com
July 2014
© Diodes Incorporated

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet ZXMS6005DT8Q.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ZXMS6005DT860V N-CHANNEL SELF PROTECTED ENHANCEMENT MODEDiodes
Diodes
ZXMS6005DT8QN-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFETDiodes
Diodes

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar