PDF ZXMS6004FFQ Data sheet ( Hoja de datos )

Número de pieza	ZXMS6004FFQ
Descripción	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes	Diodes
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No Preview Available ! ZXMS6004FFQ 60V N-CHANNEL SELF PROTECTED ENHDAMNCNE2M0E2N7TUMSOSDE IntelliFET MOSFET Product Summary  Continuous Drain Source Voltage: 60V  On-State Resistance: 500mΩ  Nominal Load Current (VIN = 5V): 1.3A  Clamping Energy: 90mJ Description The ZXMS6004FFQ is a self-protected low side IntelliFET™ MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FFQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Features and Benefits  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Continuous Current Rating  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Applications  Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors  All Types of Resistive, Inductive and Capacitive Loads in Switching Applications  μC Compatible Power Switch for 12V and 24V DC Applications  Automotive Rated  Replaces Electromechanical Relays and Discrete Circuits  Linear Mode Capability – the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. SOT23F Top View Mechanical Data  Case: SOT23F  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish  Weight: 0.012 grams (Approximate) S D IN Top view Pin Out Ordering Information (Note 5) Product ZXMS6004FFQTA Marking 1K6 Reel Size (inches) 7 Tape Width (mm) 12 Quantity per Reel 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q10x qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. IntelliFET is a trademark of Diodes Incorporated ZXMS6004FFQ Document number: DS37132 Rev. 4 - 2 1 of 9 www.diodes.com January 2016 © Diodes Incorporated 1 page ZXMS6004FFQ DMN2027USS Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Static Characteristics Symbol Min Typ Max Unit Test Condition Drain-Source Clamp Voltage Off-State Drain Current Input Threshold Voltage Input Current Input Current while Overtemperature Active Static Drain-Source On-State Resistance Continuous Drain Current (Note 6) Continuous Drain Current (Note 7) Current Limit (Note 9) Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Overtemperature Protection Thermal Overload Trip Temperature (Note 10) Thermal Hysteresis (Note 10) VDS(AZ) IDSS VIN(TH) IIN — RDS(ON) ID ID(LIM) tD(ON) tR tD(OFF) fF TJT fF 60 — — 0.7 — — — — — 0.9 1.0 1.2 1.3 0.7 1 — — — — +150 — 65 — — 1 60 120 — 400 350 — — — — 1.7 2.2 5 10 45 15 +175 +10 70 V ID = 10mA 500 nA VDS = 12V, VIN = 0V 1 µA VDS = 36V, VIN = 0V 1.5 V VDS = VGS, ID = 1mA 100 μA VIN = +3V 200 VIN = +5V 220 μA VIN = +5V 600 mΩ VIN = +3V, ID = 0.5A 500 VIN = +5V, ID = 0.5A — VIN = 3V; TA = +25°C — — A VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C — VIN = 5V; TA = +25°C — — A VIN = +3V VIN = +5V — — — μs VDD = 12V, ID = 0.5A, VGS = 5V — — °C — °C — — Notes: 9. The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 10. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. ZXMS6004FFQ Document number: DS37132 Rev. 4 - 2 5 of 9 www.diodes.com January 2016 © Diodes Incorporated 5 Page

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