PDF ZXMS6004DN8 Data sheet ( Hoja de datos )

Número de pieza	ZXMS6004DN8
Descripción	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes	Diodes
Logotipo
Hay una vista previa y un enlace de descarga de ZXMS6004DN8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! ZXMS6004DN8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  Continuos Drain-Source Voltage: 60V  On-State Resistance: 500mΩ  Nominal Load Current (VIN = 5V): 1.3A  Clamping Energy: 120mJ Description The ZXMS6004DN8 is a dual self-protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DN8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Features and Benefits  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Continuous Current Rating  Totally Lead-Free; RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  Lamp Driver  Motor Driver  Relay Driver  Solenoid Driver Mechanical Data      SO-8 Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 79.1 mg (Approximate) Top View IN1 D1 D2 IN2 S1 Device Symbol S2 S1 IN1 S2 IN2 Top View Pin-Out D1 D1 D2 D2 Ordering Information (Note 4) Product ZXMS6004DN8-13 Marking 6004DN8 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Logo Part No. Pin 1. 6004DN8 YY WW 6004DN8 = Product name YY: Year WW: Week: 01~52; 52 represents 52 and 53 week Top View IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 1 of 9 www.diodes.com August 2015 © Diodes Incorporated 1 page ZXMS6004DN8 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage Off-State Drain Current VDS(AZ) 60 65 70 V ID = 10mA IDSS — — — — 1 2 µA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V Input Threshold Voltage Input Current VIN(th) IIN 0.7 — — 1 1.5 60 100 120 200 V VDS = VGS, ID = 1mA µA VIN = +3V VIN = +5V Input Current while Over-Temperature Active — — — 300 µA VIN = +5V Static Drain-Source On-State Resistance RDS(ON) — — 400 600 mΩ VIN = +3V, ID = 1A 350 500 VIN = +5V, ID = 1A Continuous Drain Current (Notes 5) Continuous Drain Current (Note 5) 0.9 — — VIN = 3V; TA = +25°C 1.0 — ID 1.1 — — — A VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C 1.2 — — VIN = 5V; TA = +25°C Current Limit (Note 8) ID(LIM) 0.7 1 1.7 2.2 — — A VIN = +3V VIN = +5V Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time td(on) — 5 — µs tr — 10 — µs td(off) — 45 — µs VDD = 12V, ID = 0.5A, VGS = 5V ff — 15 — µs Over-Temperature Protection Thermal Overload Trip Temperature (Note 9) TJT +150 +175 — °C — Thermal Hysteresis (Note 9) ff — +10 — °C — Notes: 8. The drain current is restricted only when the device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. ZXMS6004DN8 Document number: DS38040 Rev. 2 - 2 5 of 9 www.diodes.com August 2015 © Diodes Incorporated 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet ZXMS6004DN8.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
ZXMS6004DN8	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET	Diodes

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar