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PDF DMTH4007SPS Data sheet ( Hoja de datos )

Número de pieza DMTH4007SPS
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Green DMTH4007SPS
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
40V
RDS(ON) Max
7.6mΩ @ VGS = 10V
ID Max
TC = +25°C
(Note 9)
100A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and loadswitch.
Applications
Power Management
DC-DC Converters
Motor Control
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4007SPSQ)
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI®5060-8
Top View
Pin1
Bottom View
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH4007SPS-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated

1 page




DMTH4007SPS pdf
DMTH4007SPS
0.01
0.009
0.008
0.007
0.006
VGS=10V, ID=20A
0.005
0.004
0.003
0.002
0.001
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
30
4
3.5
3
2.5 ID=1mA
2
ID=250μA
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Temperature
10000
25 VGS=0V, TA=125
20 VGS=0V, TA=150
15 VGS=0V, TA=175
10
5
0
0
VGS=0V, TA=85
VGS=0V, TA=25
VGS=0V, TA=-55
0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
f=1MHz
1000
100
Ciss
Coss
Crss
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
10 1000
R DS(on)
Limited
8 PW = 1µs
100
6 VDS=30V, ID=20A
4
2
0
0 5 10 15 20 25 30 35
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
40 45
5 of 8
www.diodes.com
PW = 1s
PW = 100ms
10 PW = 10ms
PW = 1ms
PW = 100µs
1 TJ(m ax) = 175°C
TC = 25°C
PW = 10µs
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
.1.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
November 2015
© Diodes Incorporated

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