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PDF DMT6009LFG Data sheet ( Hoja de datos )
| Número de pieza | DMT6009LFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
60V
RDS(ON) Max
10mΩ @ VGS = 10V
11.7mΩ @ VGS = 4.5V
ID Max
TC = +25°C
34A
31.5A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
DMT6009LFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Features and Benefits
Low RDS(ON) – Ensures On-State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
100% UIS (Avalanche) Rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (Approximate)
POWERDI3333-8
Top View
S Pin 1
S
S
G
D
D
D
D
Bottom View
18
27
36
45
Top View
Internal Schematic
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT6009LFG-7
DMT6009LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMT6009LFG
Document number: DS37741 Rev. 2 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
1 page  
DMT6009LFG
0.02 2
0.016
0.012
0.008
0.004
VGS=4.5V, ID=11.5A
VGS=10V, ID=13.5A
1.6
1.2
0.8
ID=1mA
ID=250μA
0
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On-Resistance Variation with Junction
Temperature
150
30
25
20
VGS=0V, TJ=+85°C
15 VGS=0V, TJ=+125°C
10 VGS=0V, TJ=+150°C
5
0
0 0.3 0.6
VGS=0V, TJ=+25°C
VGS=0V, TJ=-55°C
0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0.4
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
150
10000
f=1MHz
Ciss
1000
Coss
100 Crss
10
0
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
10
8
6
4
2
0
0
VDS=30V, ID=13.5A
7 14 21 28
Qg，TOTAL GATE CHARGE (nC)
GFiagtuerCe h1a1r.gGeate Charge
35
1000
100
RDS(ON) Limited
PW=100μs
10
1
0.1
0.01
PW=1ms
PW=10ms
PW=100ms
TJ(MAX)=150°C
TA=25°C
Single Pulse
DUT on 1*MRP board
PW=1s
PW=10s
DC
0.001
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMT6009LFG
Document number: DS37741 Rev. 2 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet DMT6009LFG.PDF ] | |
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