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PDF DMN63D1LDW Data sheet ( Hoja de datos )
| Número de pieza | DMN63D1LDW | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN63D1LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON) max
2Ω @ VGS = 10V
3Ω @ VGS = 5V
ID max
TA = +25°C
250mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
SOT363
G1
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D1 D2
D2 G1 S1
G2
ESD Protected Gate
Top View
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Q1 N-Channel
Q2 N-Channel
Equivalent Circuit
S2 G2 D1
Top View
Pin out
Ordering Information (Note 4)
Notes:
Part Number
DMN63D1LDW-7
DMN63D1LDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds..
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D2 G1 S1
1D3 YM
1D3 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
Code
B
Month
Code
Jan
1
2015
C
Feb
2
S2 G2 D1
2016
D
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
1 of 6
www.diodes.com
July 2015
© Diodes Incorporated
1 page  
DMN63D1LDW
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
D=0.7
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA(t)=r(t) * RθJA
RθJA=414℃/W
Duty Cycle, D=t1 / t2
0.001
0.000001 0.00001 0.0001 0.001 0.01
0.1
1
10 100
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E E1
F
A2
A1
b
D
c
e
a
L
SOT363
Dim Min Max Typ
A1 0.00 0.10 0.05
A2 0.90 1.00 1.00
b 0.10 0.30 0.25
c 0.10 0.22 0.11
D 1.80 2.20 2.15
E 2.00 2.20 2.10
E1 1.15 1.35 1.30
e 0.650 BSC
F 0.40 0.45 0.425
L 0.25 0.40 0.30
a 8°
All Dimensions in mm
DMN63D1LDW
Document number: DS38033 Rev. 1 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN63D1LDW.PDF ] | |
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