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PDF DMN6069SFG Data sheet ( Hoja de datos )
| Número de pieza | DMN6069SFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN6069SFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
60V
RDS(ON) Max
50mΩ @ VGS = 10V
63mΩ @ VGS = 4.5V
ID Max
TC = +25°C
18A
16A
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.03 grams (Approximate)
S Pin 1
S
S
G
POWERDI3333-8
D
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN6069SFG-7
DMN6069SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N69
N69 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMN6069SFG
Document number: DS37821 Rev. 3 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated
1 page  
3
2.5
2 ID=1mA
20
VGS=0V
15
DMN6069SFG
1.5 ID=250µA
1
0.5
0
-50
10000
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. Gate Threshold Variation vs.
JunctionTemperature
150
1000
100
150℃
125℃
10
85℃
1
25℃
0.1
0
10 20 30 40 50 60
10000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Drain-Source Leakge Current vs.
Voltage
f=1MHz
1000
Ciss
100 Coss
10
0
Crss
10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
40
10 TA=-55℃
TA=25℃
5 TA=85℃
TA=125℃
TA=150℃
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3 VDS=30V, ID=12A
2
1
0
0 2 4 6 8 10 12 14 16
Qg (nC)
Figure 10. Gate Charge
100
RDS(ON) LIMITED
PW=100µs
10 PW=10ms
PW=1ms
1
PW=100ms
PW=1s
0.1 TJ(Max)=150℃
TA=25℃
Single Pulse
PW=10s
DUT on 1*MRP board
VGS=10V
0.01
DC
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMN6069SFG
Document number: DS37821 Rev. 3 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
5 Page | ||
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