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PDF IRG7PG35U-EPbF Data sheet ( Hoja de datos )

Número de pieza IRG7PG35U-EPbF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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No Preview Available ! IRG7PG35U-EPbF Hoja de datos, Descripción, Manual

  IRG7PG35UPbF
IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
 Low VCE (ON) trench IGBT technology
 Low switching losses
 Square RBSOA
 100% of the parts tested for ILM
 Positive VCE (ON) temperature co-efficient
 Tight parameter distribution
 Lead-free package
 C
G
E
n-channel
 C
  VCES = 1000V
IC = 35A, TC = 100°C
TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
C
Benefits
 High efficiency in a wide range of applications
 Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
Applications
 U.P.S. 
 Welding 
 Solar Inverter 
 Induction heating 
GCE
IRG7PG35UPbF
TO-247AC
GC E
IRG7PG35U-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG35UPbF
IRG7PG35U-EPbF
TO-247AC
TO-247AD
Tube
Tube
25 IRG7PG35UPbF
25 IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
  
Max.
Units
1000
V
55
35
60
A
80
±30 V
210 W
105
-55 to +175
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
1 www.irf.com © 2014 International Rectifier
Min.
–––
–––
–––
 
Typ.
–––
0.24
–––
 
Max.
0.70
–––
40
 
Units
°C/W
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April 14, 2014

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IRG7PG35U-EPbF pdf
 
80
70
60
50
40
TJ = 175°C
30
20
TJ = 25°C
10
0
4 5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
1000
tdOFF
100 tF
tdON
10
tR
1
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
10000
1000
tdOFF
IRG7PG35UPbF/IRG7PG35U-EPbF
4000
3000
2000
1000
EON
EOFF
0
0 10 20 30 40
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
3500
3000
2500
EON
2000
1500
EOFF
1000
500
0
20 40 60 80 100
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
10000
1000
Cies
100
tdON
tF
tR
10
0 20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
100
Coes
10
0
Cres
100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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April 14, 2014

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IRG7PG35U-EPbF arduino
  IRG7PG35UPbF/IRG7PG35U-EPbF
Qualification Information
Qualification Level
Industrial
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
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April 14, 2014

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