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PDF DB107G Data sheet ( Hoja de datos )

Número de pieza DB107G
Descripción Single Phase Glass Passivated Silicon Bridge Rectifier
Fabricantes GeneSiC 
Logotipo GeneSiC Logotipo



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No Preview Available ! DB107G Hoja de datos, Descripción, Manual

Single Phase Glass Passivated
Silicon Bridge Rectifier
DB105G thru DB107G
VRRM = 600 V - 1000 V
IO = 1 A
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded
plastic technique
• High surge current capability
• Small size, simple installation
• Types from 600 V up to 1000 V VRRM
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD-
202, Method 208
Polarity: Polarrity symbols marked on the body
Mounting position: Any
DB Package
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
DB105G
600
420
600
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
DB105G
Maximum average forward
rectified current
Peak forward surge current
Maximum instantaneous forward
voltage drop
Maximum DC reverse current at
rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
IO
IFSM
VF
IR
Cj
RΘJC
Ta = 40 °C
tp = 8.3 ms, half sine
IF = 1.0 A
Ta = 25 °C
Ta = 125 °C
1.0
30
1.1
5
500
25
20
DB106G
800
560
800
-55 to 150
-55 to 150
DB107G
1000
700
1000
-55 to 150
-55 to 150
DB106G
1.0
30
1.1
5
500
25
20
DB107G
1.0
30
1.1
5
500
25
20
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
pF
°C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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