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Número de pieza | CHA5250-QDG | |
Descripción | 5.5-9GHz Medium Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA5250-QDG (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! CHA5250-QDG
5.5-9GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5250-QDG is a three stages
monolithic GaAs medium power circuit, close
to 1 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5-9GHz
■ 26dB Linear Gain
■ 28dBm output power @1dB comp.
■ 36dBm output TOI
■ 30% PAE@1dB compression
■ DC bias: Vd=7Volt@Id=280mA
■ 24L-QFN4x4
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
0
Gain & RLoss
S11
S21
S22
5 10
Frequency (GHz)
15
20
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
5.5 9.0 GHz
26.0 dB
36.0 dBm
28.0 dBm
Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page 5.5-9GHz Medium Power Amplifier
CHA5250-QDG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 280mA
Measurement in the QFN planes as defined in paragraph “Definition of the Sij reference
planes”
Linear Gain & Return Loss
30
25
20
15
S11
10
S21
5
S22
0
-5
-10
-15
-20
-25
-30
2 3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
Linear Gain versus Drain voltage
30
29
28
27
26
25
24
23
22
21
7V 6V
20
19
18
2 3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12
5/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 5.5-9GHz Medium Power Amplifier
Package outline (1)
CHA5250-QDG
Matt tin, Lead Free
Units :
From the standard :
25-
(Green)
mm
JEDEC MO-220
(VGGD)
GND
1- Gnd(2)
2- Gnd(2)
3- Gnd(2)
4- RF out
5- Gnd(2)
6- Gnd(2)
7- Vd3
8- Nc
9- Vd2
10- Nc
11- Nc
12- Vd1
13- Gnd(2)
14- Gnd(2)
15- RF in
16- Gnd(2)
17- Gnd(2)
18- Gnd(2)
19- Nc
20- Nc
21- Nc
22- Vg
23- Nc
24- Nc
(1) The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12
11/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet CHA5250-QDG.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA5250-QDG | 5.5-9GHz Medium Power Amplifier | United Monolithic Semiconductors |
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