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Número de pieza | CHA5050-QDG | |
Descripción | 17-24GHz Medium Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA5050-QDG (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! CHA5050-QDG
RoHS COMPLIANT
17-24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5050-QDG is a medium power
amplifier four stages monolithic circuit.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UUMMSS
AA3560685780A
YYYYWWWWG
Main Features
■ Broadband performances: 17-24GHz
■ 22dB Linear Gain
■ 25dBm Pout @ 1dB comp
■ 30dBm Output IP3
■ DC bias: Vd=6.0Volt@Id=230mA
■ 24L-QFN4x4
■ MSL1
Main Electrical Characteristics
Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
17 24 GHz
Gain Linear Gain
22 dB
P1dB Output power @ 1dB compression
25 dBm
Psat Saturated output power
26 dBm
OIP3 Output IP3
30 dBm
Ref. : DSCHA5050QDG1216 - 04 Aug 11
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
1 page 17-24GHz Medium Power Amplifier
CHA5050-QDG
Typical Board Measurements
Tamb.= +25°C, Vd = +6.0V, Vg = -0.5V, Id = 230mA
If no specific mention, the following values are representative of on board measurements (in
QFN access planes) as defined on the paragraph ”Evaluation mother board”.
Linear Gain & Return Loss versus frequency at room temperature
25
20 S21
15
10
5
0
-5 S11
-10
-15
S22
-20
-25
-30
15 16 17 18 19 20 21 22 23 24 25 26 27 28
Frequency (GHz)
Linear Gain versus frequency & temperature
(-0.016dB/°C and per stage)
30
-40 °C
28 +25 °C
+85 °C
26
24
22
20
18
16
17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
Ref. : DSCHA5050QDG1216 - 04 Aug 11
5/14
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
5 Page 17-24GHz Medium Power Amplifier
CHA5050-QDG
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 10nF 10%, 100pF 5% and 1µF 10% are recommended
for all DC access.
■ See application note AN0017 for details.
Ref. : DSCHA5050QDG1216 - 04 Aug 11
11/14
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet CHA5050-QDG.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA5050-QDG | 17-24GHz Medium Power Amplifier | United Monolithic Semiconductors |
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