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PDF WFU1N80 Data sheet ( Hoja de datos )

Número de pieza WFU1N80
Descripción N-Channel MOSFET
Fabricantes Wisdom technologies 
Logotipo Wisdom technologies Logotipo



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No Preview Available ! WFU1N80 Hoja de datos, Descripción, Manual

Wisdom Semiconductor
WFU1N80
N-Channel MOSFET
Features
RDS(on) (Max 18.0 )@VGS=10V
Gate Charge (Typical 6.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
I-PAK
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
800
1.2
0.85
4.8
±30
130
5.3
4.0
53
0.40
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
2.35
50
110
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

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