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PDF BYW29E-100 Data sheet ( Hoja de datos )
| Número de pieza | BYW29E-100 | |
| Descripción | Ultrafast power diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BYW29E-100
Ultrafast power diode
17 September 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
• Fast switching
• Guaranteed ESD capability
• High thermal cycling performance
• Low on-state loss
• Low thermal resistance
• Rugged: reverse voltage surge capability
• Soft recovery minimizes power-consuming oscillations
3. Applications
• Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 150 °C; Fig. 4
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7
Electrostatic discharge
VESD
electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ
voltage
Min Typ Max Unit
- - 100 V
- - 8A
- 0.8 0.895 V
- 20 25 ns
- - 8 kV
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1 page  
NXP Semiconductors
30
IF
(A)
20
10
003aaj509
(1) (2) (3)
0
0 0.5 1 1.5 2
VF (V)
Fig. 4. Forward current as a function of forward
voltage
BYW29E-100
Ultrafast power diode
IF
dlF
dt
trr
time
25 %
Qr 100 %
IR IRM
003aac562
Fig. 5. Reverse recovery definitions; ramp recovery
103
Qr
(nC)
102
10
003aaj510
(4)
(3)
(2)
(1)
103
trr
(ns)
102
10
003aaj511
(2)
(1)
1
1 10 102
dIF
Fig. 6. Recovered charge as a function of rate of
change of forward current; maximum values
1
1 10 102
dIF
Fig. 7. Reverse recovery time as a function of rate of
change of forward current; maximum values
BYW29E-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2013
© NXP N.V. 2013. All rights reserved
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