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PDF NXPSC04650 Data sheet ( Hoja de datos )
| Número de pieza | NXPSC04650 | |
| Descripción | Silicon Carbide Diode | |
| Fabricantes | NXP Semiconductors | |
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NXPSC04650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
3. Applications
• Power factor correction
• Telecom/Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED/OLED TV
• Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 136 °C; square-wave
pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 4 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit
- - 650 V
- - 4A
- - 175 °C
- 1.5 1.7 V
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1 page  
NXP Semiconductors
NXPSC04650
Silicon Carbide Diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
Cd diode capacitance
8
IF
(A)
6
Conditions
IF = 4 A; Tj = 25 °C; Fig. 4
IF = 4 A; Tj = 150 °C; Fig. 4
VR = 650 V; Tj = 25 °C
VR = 650 V; Tj = 150 °C
IF = 4 A; dIF/dt = 500 A/µs; VR = 400 V;
Tj = 25 °C; Fig. 5
f = 1 MHz; VR = 1 V; Tj = 25 °C
f = 1 MHz; VR = 300 V; Tj = 25 °C
f = 1 MHz; VR = 600 V; Tj = 25 °C
aaa-014289
16
Qr
(nC)
12
Min Typ Max Unit
- 1.5 1.7 V
- 1.8 2.1 V
- - 170 µA
- - 550 µA
- 7 - nC
- 130 - pF
- 16 - pF
- 13 - pF
aaa-014290
4 (1)
(2)
(3)
(4)
2
8
4
0
0123
Vo = 1.260 V; Rs = 0.211 Ω
(1) Tj = 25 °C; typical values
(2) Tj = 100 °C; typical values
(3) Tj = 150 °C; typical values
(4) Tj = 175 °C; typical values
VF (V)
4
Fig. 4. Forward current as a function of forward
voltage; typical values
0
0 50 100 150 175
Tj (°C)
Fig. 5. Recovered charge as a function of junction
temperature
NXPSC04650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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