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PDF HSMS-286E Data sheet ( Hoja de datos )
| Número de pieza | HSMS-286E | |
| Descripción | Surface Mount Microwave Schottky Detector Diodes | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS‑286x family of DC biased detector diodes
have been designed and optimized for use from 915 MHz
to 5.8 GHz.They are ideal for RF/ID and RFTag applications
as well as large signal detection, modulation, RF to DC
conversion or voltage doubling.
Available in various package configurations, this family
of detector diodes provides low cost solutions to a wide
variety of design problems. Avago’s manufacturing
techniques assure that when two or more diodes are
mounted into a single surface mount package, they
are taken from adjacent sites on the wafer, assuring the
highest possible degree of match.
Pin Connections and Package Marking
16
25
34
Notes:
1. Package marking provides orientation and identification.
2. The first two characters are the package marking code.
The third character is the date code.
SOT-23/SOT-143 Package Lead Code Identification
(top view)
SINGLE
3
SERIES
3
12
#0
COMMON
ANODE
3
12
#2
COMMON
CATHODE
3
1 #3 2
1 #4 2
UNCONNECTED
PAIR
34
Features
• Surface Mount SOT-23/SOT‑143 Packages
• Miniature SOT-323 and SOT‑363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
up to 35 mV/µW at 2.45 GHz
up to 25 mV/µW at 5.80 GHz
• Low FIT (Failure in Time) Rate*
• Tape and Reel Options Available
• Unique Configurations in Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
• HSMS-286K Grounded Center Leads Provide up to
10 dB Higher Isolation
• Matched Diodes for Consistent Performance
• Better Thermal Conductivity for Higher Power
Dissipation
• Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
SOT-323 Package Lead Code Identification (top view)
SINGLE
3
SERIES
3
1 B2
COMMON
ANODE
3
1 C2
COMMON
CATHODE
3
1E2
1 F2
SOT-363 Package Lead Code Identification (top view)
HIGH ISOLATION UNCONNECTED
UNCONNECTED PAIR
TRIO
654
654
1 #5 2
123
K
BRIDGE
QUAD
654
1 2L 3
RING
QUAD
654
1 2P 3
1 2R 3
1 page  
Typical Parameters, Single Diode
100
10
T A = –55°C
T A = +25°C
T A = +85°C
1
.1
.010.1 0.2 0.3 0.4 0.5 0.6 0. 7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
100
IF (left scale)
10
10
VF (right scale)
10.05
0.10 0.15 0.20
FORWARD VOLTAGE (V)
0.251
10000
1000
100
RL = 100 KΩ
2.45 GHz
915 MHz
10
1
0.1-50
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
-40 -30 -2 0 -1 0
POWER IN (dBm)
0
30
RL = 100 KΩ
10
2.45 GHz
915 MHz
1
0.3
-50
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
-40
POWER IN (dBm)
-30
10,000
1000
100
10
20 µA
5 µA
10 µA
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
RL = 100 KΩ
1–40 –30 –20 –10
0
POWER IN (dBm)
10
40
35
30
25
20
Input Power =
15 –30 dBm @ 2.45 GHz
Data taken in fixed-tuned
10 FR4 circuit
5 R L = 100 KΩ
.1 1
10
BIAS CURRENT (µA)
100
5
5 Page 
120
INPUT POWER = –30 dBm
100 3.0 µA
80 1.0 µA
60 10 µA
40 0.5 µA
-55 -35 -15 5
25 45 65 85
TEMPERATURE (°C)
Figure 25. Output Voltage vs. Temperature and Bias Current
in the 915 MHz Voltage Doubler using the HSMS-286C.
35
INPUT POWER = – 30 dBm
3.0 µA
25 10 µA
1.0 µA
15
0.5 µA
5
-55 -35 -15 5 25 45 65 85
TEMPERATURE (°C)
Figure 26. Output Voltage vs. Temperature and Bias Current
in the 5.80 GHz Voltage Detector using the HSMS-286B Schottky.
Six Lead Circuits
The differential detector is often used to provide temper‑
ature compensation for a Schottky detector, as shown in
Figures 27 and 28.
bias
matching
network
differential
amplifier
Figure 27. Differential Detector.
PA
detector
diode
Vs
to differential
amplifier
HSMS-2865
reference diode
Figure 28. Conventional Differential Detector.
These circuits depend upon the use of two diodes
having matched Vf characteristics over all operating
temperatures. This is best achieved by using two diodes
in a single package, such as the SOT-143 HSMS‑2865 as
shown in Figure 29.
In high power differential detectors, RF coupling from
the detector diode to the reference diode produces a
rectified voltage in the latter, resulting in errors.
Isolation between the two diodes can be obtained
by using the HSMS-286K diode with leads 2 and 5
grounded. The difference between this product and the
conventional HSMS-2865 can be seen in Figure 29.
3 4 6 54
12
HSMS-2865
SOT-143
12 3
HSMS-286K
SOT-363
Figure 29. Comparing Two Diodes.
The HSMS-286K, with leads 2 and 5 grounded, offers
some isolation from RF coupling between the diodes.
This product is used in a differential detector as shown
in Figure 30.
PA
detector
diode
Vs
to differential
amplifier
HSMS-286K
reference diode
Figure 30. High Isolation Differential Detector.
In order to achieve the maximum isolation, the designer
must take care to minimize the distance from leads 2
and 5 and their respective ground via holes.
Tests were run on the HSMS-282K and the conventional
HSMS-2825 pair, which compare with each other in the
same way as the HSMS-2865 and HSMS-286K, with the
results shown in Figure 31.
Frequency = 900 MHz
5000
1000
RF diode
Vout
Square law
100 response
10
1
0.5
-35
37 dB
HSMS-2825
ref. diode HSMS-282K
ref. diode
47 dB
-25 -15
-5
5
INPUT POWER (dBm)
15
Figure 31. Comparing HSMS-282K with HSMS-2825.
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet HSMS-286E.PDF ] | |
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