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PDF AT-32063 Data sheet ( Hoja de datos )
| Número de pieza | AT-32063 | |
| Descripción | High Performance NPN Silicon Bipolar Transistor | |
| Fabricantes | AVAGO | |
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AT-32063
Low Current, High Performance NPN Silicon Bipolar Transistor
Data Sheet
Description
The AT-32063 contains two high performance NPN bipolar
transistors in a single SOT-363 package. The devices are
unconnected, allowing flexibility in design. The pin-out
is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount
package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and low
operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated
systems as an LNA, gain stage, buffer, oscillator, or active
mixer. Typical amplifier designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more associated gain at a 2.7
V, 5 mA bias, with noise performance being relatively
insensitive to input match. High gain capability at 1 V, 1
mA makes this device a good fit for 900 MHz pager ap-
plications. Voltage breakdowns are high enough for use
at 5 volts.
The AT-3 series bipolar transistors are fabricated using
aSnelfo-Apltiigmniezded-Trvaenrssiisotnoro(fSAATv)agporo’sce1s0s G. THhzefdt i,e3a0reGnHiztrfidmaex
passivated for surface protection. Excellent device unifor-
mity, performance and reliability are produced by the use
of ion-implantation, self-alignment techniques, and gold
metallization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance: 1.1 dB NF, 14.5 dB GA
• Characterized for End-of-Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
1
B1
2
E1
3
C2
6
C1
5
E2
4
B2
1 page  
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.87 -19
0.52 -72
0.34 -101
0.31 -106
0.22 -129
0.19 -141
0.17 -150
0.14 -169
0.12 160
0.16 117
0.22 93
dB
23.36
19.21
15.40
14.60
11.54
10.12
9.33
7.95
6.34
4.46
3.15
S21
Mag
14.72
9.13
5.89
5.37
3.77
3.21
2.93
2.50
2.08
1.67
1.44
S12
Ang dB Mag Ang
162 -37.77 0.013 80
116 -27.03 0.045 60
94 -24.01 0.063 58
90 -23.41 0.067 58
74 -20.85 0.091 58
66 -19.52 0.106 58
61 -18.72 0.116 57
52 -17.22 0.138 56
39 -15.25 0.173 52
20 -12.40 0.240 44
2 -10.03 0.315 33
S22
Mag Ang
0.96 -9
0.72 -25
0.62 -28
0.61 -29
0.58 -33
0.57 -36
0.57 -38
0.57 -42
0.56 -49
0.53 -63
0.48 -82
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
0.9
0.98
16.4
0.45
1.8
1.50
11.6
0.29
2.4
1.77
10.1
0.33
Ang.
51
100
153
—
0.23
0.16
0.11
35
30
25 MSG
20
15 MAG
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at VCE = 2.7 V, IC = 5 mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.55 -41
0.20 -107
0.13 -137
0.13 -141
0.10 -164
0.09 -178
0.09 172
0.08 152
0.10 127
0.15 101
0.21 86
dB
30.48
21.24
16.48
15.60
12.26
10.78
9.93
8.52
6.85
4.92
3.59
S21
Mag
33.40
11.53
6.66
6.02
4.10
3.46
3.14
2.67
2.20
1.76
1.51
S12
Ang dB Mag Ang
143 -39.81 0.010 74
97 -29.18 0.035 72
82 -24.63 0.059 72
79 -23.79 0.065 71
67 -20.43 0.095 68
60 -18.88 0.114 66
56 -17.98 0.126 64
48 -16.39 0.151 60
36 -14.4
0.191
54
18 -11.68 0.261 43
0
-9.52 0.334
31
S22
Mag Ang
0.83 -15
0.56 -20
0.53 -22
0.53 -22
0.52 -27
0.53 -31
0.53 -34
0.53 -39
0.52 -47
0.48 -61
0.44 -79
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
0.9 1.51 17.9 0.13
1.8 1.78 12.7 0.20
2.4 1.96 10.6 0.28
Ang.
88
178
235
—
0.20
0.13
0.08
40
35
30 MSG
25
20
MAG
15
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at VCE = 2.7 V, IC = 20 mA.
5 Page | ||
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