DataSheet.es    


PDF AT-32011 Data sheet ( Hoja de datos )

Número de pieza AT-32011
Descripción High Performance NPN Silicon Bipolar Transistor
Fabricantes AVAGO 
Logotipo AVAGO Logotipo



Hay una vista previa y un enlace de descarga de AT-32011 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! AT-32011 Hoja de datos, Descripción, Manual

AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger inter­digitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla­
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
PaTacnkodapgivdeieeMwnat.irfPkicainactgkioapngr.oe"vmxid"aerisskiotnhrgieepndrtaoatvetiidocneosdaeon.rdieidnetanttioifnication.
"x" is the date code.

1 page




AT-32011 pdf
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.97
0.88
0.78
0.75
0.67
0.63
0.61
0.59
0.59
0.63
0.69
-11 11.09 3.59 172 -33.55 0.021 83
-52 10.13 3.21 141 -20.85 0.091 59
-86
8.67
2.71 117 -17.62 0.132 41
-94
8.35
2.62 112 -17.27 0.137 37
-127
6.35
2.08
89
-16.30
0.153
23
-144
5.25
1.83
77
-16.28
0.154
16
-155
4.75
1.73
70
-16.42
0.151
13
-175
3.48
1.49
57
-16.86
0.144
9
157
1.77
1.23
40
-17.89
0.128
8
120
-0.39
0.96
18
-18.40
0.120
23
94
-2.39
0.76
0
-15.60
0.166
35
0.99 -5
0.92 -21
0.82 -32
0.79 -35
0.71 -45
0.67 -50
0.65 -53
0.62 -59
0.61 -68
0.59 -84
0.59 -104
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq.
GHz
FdmBin
            Γ  op t
Mag Ang
0.5[1]
0.9
1.8
2.4
0.42
0.71
1.37
1.80
0.79
0.70
0.53
0.55
26
54
119
158
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
R–n
0.44
0.35
0.18
0.08
25
15
MSG
5 S21
MAG
-50 1 2 3 4 5
FREQUENCY (GHz)
Figure 17. AT-32011 Gains vs. Frequency at Vce = 1
V, Ic = 1 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
AT-32011 fig 17
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.97
0.81
0.61
0.56
0.41
0.36
0.34
0.34
0.38
0.46
0.51
-11 11.09 3.58 170 -32.75 0.023 83
-52
9.88
3.12 134 -20.30 0.097 60
-87
8.07
2.53 107 -17.57 0.132 46
-95
7.65
2.41 101 -17.24 0.137 44
-136
5.43
1.87
77
-16.61
0.148
39
-160
4.30
1.64
66
-16.36
0.152
41
-177
3.74
1.54
59
-16.05
0.158
44
154
2.49
1.33
47
-15.10
0.176
49
119
0.96
1.12
32
-12.77
0.230
55
81
-0.84
0.91
15
-8.68
0.368
50
56
-1.90
0.80
5
-5.68
0.520
37
0.99 -5
0.90 -22
0.78 -33
0.76 -35
0.68 -42
0.65 -46
0.63 -49
0.61 -55
0.59 -65
0.56 -87
0.51 -114
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq.
GHz
Fmin             Γ  op t
dB Mag Ang
0.5[1]
0.9
1.8
2.4
0.42
0.71
1.37
1.80
0.87
0.73
0.42
0.50
25
55
143
-162
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

Rn
0.48
0.34
0.11
0.07
25
15
MSG
MAG
5
S21
MSG
-50 1 2 3 4
FREQUENCY (GHz)
5
Figure 18. AT-32033 Gains vs. Frequency at Vce = 1 V,
Ic = 1 mA.
AT-32011 fig 18

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet AT-32011.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AT-32011Low Current/ High Performance NPN Silicon Bipolar TransistorAgilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
AT-32011High Performance NPN Silicon Bipolar TransistorAVAGO
AVAGO
AT-32011-BLKLow Current/ High Performance NPN Silicon Bipolar TransistorAgilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
AT-32011-TR1Low Current/ High Performance NPN Silicon Bipolar TransistorAgilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar