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PDF UT5003 Data sheet ( Hoja de datos )
| Número de pieza | UT5003 | |
| Descripción | DUAL ENHANCEMENT MODE | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UT5003 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
UT5003
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UT5003 can provide excellent RDS (ON) and low gate
charge by using UTC’s advanced trench technology. This device
is suitable for use as a load switch or in PWM applications.
FEATURES
* N-Channel: 30V, 7A
RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A
RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A
* P-Channel: -30V, -5A
RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A
RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A
* Super high dense cell design
* Reliable and rugged
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UT5003G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
Pin Assignment
12345678
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-167.B
1 page  
UT5003
TYPICAL CHARACTERISTICS(Cont.)
Gate Charge Characteristics
10
ID=7A
VDS=5V
10V
8
15V
6
4
2
0
0 4 8 12 16
Gate Charge,QG (nC)
Maximum Safe Operating Area
100
RDS(ON) Limit
100μs
10 1ms
10ms
100ms
1 1s
10s
DC
0.1
0.01
VGS=10V
Single Pulse
RθJA=135℃/W
TA=25℃
0.1 1
10
Drain-Source Voltage,VDS (V)
P-CHANNEL
100
Power MOSFET
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f=1MHZ
VGS=V
CISS
COSS
CRSS
5 10 15 20 25
Drain-to-Source Voltage,VDS (V)
30
Single Pulse Maximum Power
50 Dissipation
Single Pulse
RθJA=135℃/W
40 TA=25℃
30
20
10
0
0.001
0.01
0.1 1 10
Time,t1 (sec)
100 1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-167.B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UT5003.PDF ] | |
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