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PDF IPA60R650CE Data sheet ( Hoja de datos )
| Número de pieza | IPA60R650CE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
DPAK
tab
2
1
3
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
mΩ
Id. 9.9 A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
IPD60R650CE
IPA60R650CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S650CE / 6R650CE*
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-08-08
1 page  
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table5Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table6Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table7Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.54 0.65
1.40 -
10 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.2mA
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=2.4A,Tj=25°C
VGS=10V,ID=2.4A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
440 -
30 -
21 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 88 - pF ID=constant,VGS=0V,VDS=0...480V
-
10 -
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
-
8-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
-
58 -
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
-
11 -
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
Min.
-
-
-
-
Values
Typ. Max.
2.5 -
10.5 -
20.5 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=3A,VGS=0to10V
nC VDD=480V,ID=3A,VGS=0to10V
nC VDD=480V,ID=3A,VGS=0to10V
V VDD=480V,ID=3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
5 Rev.2.2,2016-08-08
5 Page 
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Diagram17:Drain-sourcebreakdownvoltage
700
Diagram18:Typ.capacitances
104
680
660 103
Ciss
640
620
102
600
Coss
580
101
560
540 Crss
520
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
100
0
100 200 300 400 500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
2.5
2.0
1.5
1.0
0.5
0.0
0
100 200 300 400 500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11 Rev.2.2,2016-08-08
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IPA60R650CE.PDF ] | |
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