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PDF VS3060AS Data sheet ( Hoja de datos )

Número de pieza VS3060AS
Descripción 30V/20A N-Channel Advanced Power MOSFET
Fabricantes Vanguard Semiconductor 
Logotipo Vanguard Semiconductor Logotipo



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No Preview Available ! VS3060AS Hoja de datos, Descripción, Manual

VS3060AS
30V/20A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax Lead-Free, RoHS Compliant
Green Product
Description
VS3060AS designed by the trench processing
techniques to achieve extremely low on-resistance.
Additional features of this design are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an
extremely efficient and reliable device for use in
Motor applications and a wide variety of other
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS
V
(BR)DSS
Gate-Source Voltage
Drain-Source Breakdown Voltage
TJ Maximum Junction Temperature
T
STG
I
S
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I
DM Pulse Drain Current Tested (Sillicon Limit)
ID
P
D
R
θJC
GS
Continuous Drain current@V =10V (See Fig2)
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T =25°C
C
T =25°C
C
T =25°C
C
T =25°C
C
±20
30
150
-55 to 150
20
80
20
20
3.0
V
V
°C
°C
A
A
A
W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev. A–Feb.26th, 2013
Page 1 of 5
www.vgsemi.com

1 page




VS3060AS pdf
ID
,
D
ra
in
-
S
o
ur
c
e
C
ur
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nt
(
A
)
VDS, Drain -Source Voltage
(V)
Fig1. Typical Output Characteristics
O
n
R
e
si
st
a
n
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e
(m
)
VGS, Gate -Source Voltage (V)
Fig5. On Resistance Vs. Gate -Source Voltage
CopyrightVanguard Semiconductor Co., Ltd
Rev. A–Feb.26th, 2013
ID,
Dr
ai
n-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS, Gate -Source Voltage
(V)
Fig3. Typical Transfer Characteristics

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