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PDF 26T Data sheet ( Hoja de datos )
| Número de pieza | 26T | |
| Descripción | TRIACs | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
26T Series RRooHHSS
TRIACs, 25A
Snubberless and Standard
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
High commutation (4 quadrant) or very
High commutation (3 quadrant) capability
26T series are UL certified (File ref: E320098)
Packages are RoHS compliant
APPLICATIONS
Applications include the ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits,
etc., or for phase control operation in light
dimmers, motor speed controllers, and silmilar.
The snubberless versions are especially
recommended for use on inductive loads,
due to their high commutation performances.
The 26T series provides an insulated tab
(rated at 2500VRMS).
MAIN FEATURES
SYMBOL
IT(RMS)
VDRM/VRRM
IGT(Q1)
VALUE
25
600 to 1200
35 to 50
UNIT
A
V
mA
A2
A1
A2
G
TO-220AB (non-Insulated)
(26TxxA)
12 3
TO-220AB (lnsulated)
(26TxxAI)
A2
A1 A2 G
TO-3P (non-Insulated)
(26TxxB)
A2
A1 A2
G
TO-263 (D2PAK)
(26TxxH)
A1 A2 G
TO-3P (Insulated)
(26TxxBI)
2(A2)
3(G)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current (full sine wave)
IT(RMS)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
TEST CONDITIONS
TO-3P
Tc = 105ºC
TO-263/TO-220AB/TO-3P insulated Tc = 100ºC
TO-220AB insulated
Tc = 75ºC
F =50 Hz
t = 20 ms
F =60 Hz
t = 16.7 ms
tp = 10 ms
VALUE
25
250
260
340
F =100 Hz
Tj =125ºC
50
Tp =20 µs
Tj =125ºC
Tj =125ºC
4
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A2s
A/µs
A
W
ºC
www.nellsemi.com
Page 1 of 6
1 page  
SEMICONDUCTOR
26T Series RRooHHSS
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
3000
1000
dI/dt limitation:
50A/µs
100
0.01
0.10
Tj initial=25°C
ITSM
I2t
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
tp(ms)
1.00
0.5
Tj(°C)
0.0
10.00
-40 -20 0 20 40 60 80 100 120 140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of decrease
of main current versus Tj
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4 B
CW/BW
1.2
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0 10.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
5
4
3
2
1
Tj(°C)
0
100.0
0
25
50 75 100 125
Fig.11 D2PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8 12
S(cm2)
16 20 24
TO-263
28 32 36 40
www.nellsemi.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 26T.PDF ] | |
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